STD5NM50T4 STMicroelectronics, STD5NM50T4 Datasheet - Page 3

• Manufacturer Part Number: STD5NM50T4
• Description: MOSFET N-CH 500V 7.5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD5NM50T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 415pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Forward Transconductance Gfs (max / Min): 3.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3162-2

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
r(Voff)
Q
d(on)
Q
RRM
RRM
I
Q
Q
2. Pulse width limited by safe operating area.
Q
SD
t
t
t
t
t
rr
rr
gd
c
r
gs
f
rr
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
SD
DD
DD
GS
DD
DD
G
DD
G
= 4.7
= 4.7
= 7.5A, V
= 5A, di/dt = 100A/µs,
= 5A, di/dt = 100A/µs,
= 250V, I
= 400V, I
= 10V
= 100V, T
= 100V, T
= 400V, I
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
GS
D
D
D
j
j
= 25°C
= 150°C
= 2.5A
= 7.5A
= 5A,
= 10V
= 10V
= 0
Thermal Impedance
Min.
Min.
Min.
STD5NM50/STD5NM50-1
Typ.
Typ.
Typ.
11.5
185
270
1.1
1.6
16
13
12
14
13
8
5
6
6
Max.
Max.
Max.
7.5
1.5
30
Unit
Unit
Unit
nC
nC
nC
µC
µC
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A
3/10