IRLB8748PBF International Rectifier, IRLB8748PBF Datasheet - Page 3

• Manufacturer Part Number: IRLB8748PBF
• Description: MOSFET N-CH 30V 78A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLB8748PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 78A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2139pF @ 15V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 92 A
• Power Dissipation: 75 W
• Mounting Style: Through Hole
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
Fig 3. Typical Transfer Characteristics
1000
100
Fig 1. Typical Output Characteristics
100
10
0.1
10
1
1
0.1
1
TOP
BOTTOM
T J = 175°C
V DS , Drain-to-Source Voltage (V)
2
V GS , Gate-to-Source Voltage (V)
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
T J = 25°C
3
1
≤ 60µs
Tj = 25°C
3.0V
4
V DS = 15V
≤60µs PULSE WIDTH
PULSE WIDTH
5
10
6
7
100
8
1000
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0 20 40 60 80 100120140160180
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I D = 40A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
IRLB8748PbF
1
≤ 60µs
Tj = 175°C
3.0V
PULSE WIDTH
10
100
3