IRLB8748PBF International Rectifier, IRLB8748PBF Datasheet - Page 5

• Manufacturer Part Number: IRLB8748PBF
• Description: MOSFET N-CH 30V 78A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLB8748PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 78A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2139pF @ 15V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 92 A
• Power Dissipation: 75 W
• Mounting Style: Through Hole
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
0.1
10
100
1E-006
1
Fig 9. Maximum Drain Current vs.
80
60
40
20
0
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Case Temperature
50
0.01
0.20
0.02
0.10
0.05
T C , Case Temperature (°C)
75
1E-005
Limited By Package
SINGLE PULSE
( THERMAL RESPONSE )
100
125
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
175
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
i/Ri
R
1
R
Fig 10. Threshold Voltage vs. Temperature
2.5
2.0
1.5
1.0
0.5
1
τ
-75 -50 -25
2
R
τ
2
2
R
0.001
2
R
τ
3
3
R
τ
3
3
I D = 50µA
ID = 250µA
ID = 1.0mA
T J , Temperature ( °C )
τ
R
4
0
IRLB8748PbF
τ
4
R
4
4
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
C
25 50 75 100 125 150 175
τ
Ri (°C/W) τi (sec)
1.55246
0.00682
0.00172
0.43999
0.01
0.005303
8.250407
6.932919
0.000317
5
0.1