IRF9540NSTRLPBF International Rectifier, IRF9540NSTRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF9540NSTRLPBF
• Description: MOSFET P-CH 100V 23A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF9540NSTRLPBF

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 3.1W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 23A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 117 mOhm @ 14A, 10V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 23 A
• Power Dissipation: 3.8 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 64.7 nC
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.117Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3000
2500
2000
1500
1000
100
0.1
500
10
1
0
0.2
1
T = 175°C
J
0.4
-V
-V
SD
DS
V
C
C
C
, Source-to-Drain Voltage (V)
0.6
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
C
C
C
oss
rss
iss
= 0V,
= C
= C
= C
0.8
gs
ds
gd
T = 25°C
J
+ C
+ C
10
1.0
gd
gd
f = 1MHz
, C
1.2
ds
SHORTED
V
GS
1.4
= 0V
1.6
100
A
A
1000
100
20
16
12
10
8
4
0
1
0
1
I
T
T
Single Pulse
D
C
J
= -11A
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
-V
20
Q , Total Gate Charge (nC)
DS
G
, Drain-to-Source Voltage (V)
10
40
V
V
V
BY R
DS
DS
DS
= -80V
= -50V
= -20V
DS(on)
FOR TEST CIRCUIT
60
SEE FIGURE 13
100
100µs
1ms
10ms
80
100
1000
A
A