IRF9540NSTRLPBF International Rectifier, IRF9540NSTRLPBF Datasheet - Page 5

• Manufacturer Part Number: IRF9540NSTRLPBF
• Description: MOSFET P-CH 100V 23A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF9540NSTRLPBF

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 3.1W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 23A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 117 mOhm @ 14A, 10V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 23 A
• Power Dissipation: 3.8 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 64.7 nC
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.117Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.1
25
20
15
10
10
0.00001
5
0
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
175
V
10%
90%
V
GS
DS
0.01
t
1. Duty factor D = t / t
2. Peak T = P
d(on)
Notes:
≤ 0.1 %
≤ 1
t
r
J
DM
x Z
1
0.1
thJC
P
2
DM
t
+ T
d(off)
C
t
1
t
f
t
2
+
-
1