IRF6645 International Rectifier, IRF6645 Datasheet - Page 10

• Manufacturer Part Number: IRF6645
• Description: MOSFET N-CH 100V DIRECTFET-SJ
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6645

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 4.9V @ 50µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 890pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SJ
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 5.1 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 5 ns
• Lead Free Status / Rohs Status: No

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/