IRF6645 International Rectifier, IRF6645 Datasheet - Page 6

• Manufacturer Part Number: IRF6645
• Description: MOSFET N-CH 100V DIRECTFET-SJ
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6645

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 4.9V @ 50µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 890pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SJ
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 5.1 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 5 ns
• Lead Free Status / Rohs Status: No

Fig 16b. Unclamped Inductive Test Circuit
IRF6645
Fig 15a. Gate Charge Test Circuit
6
12V
V
GS
R G
20V
Same Type as D.U.T.
V DS
GS
Fig 17a. Switching Time Test Circuit
Current Regulator
.2µF
t p
≤ 0.1 %
≤ 1
50KΩ
3mA
I AS
Current Sampling Resistors
D.U.T
.3µF
0.01 Ω
L
I
G
D.U.T.
I
D
15V
DRIVER
+
-
V
DS
+
-
V DD
+
-
A
90%
V
10%
V
DS
Fig 15b. Gate Charge Waveform
GS
Fig 16c. Unclamped Inductive Waveforms
I
AS
Vgs(th)
Fig 17b. Switching Time Waveforms
Qgs1 Qgs2
Vds
t
d(on)
t
r
Qgd
t p
Qgodr
t
d(off)
V
(BR)DSS
t
f
www.irf.com
Vgs
Id