IRFI1010NPBF International Rectifier, IRFI1010NPBF Datasheet - Page 4

• Manufacturer Part Number: IRFI1010NPBF
• Description: MOSFET N-CH 55V 49A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFI1010NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 58W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 44 A
• Power Dissipation: 47 W
• Mounting Style: Through Hole
• Gate Charge Qg: 86.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFI1010NPBF

5000
4000
3000
2000
1000
1000
100
10
0
0.4
1
T = 175°C
C
C
C
J
rss
V
V
iss
oss
0.8
SD
DS
V
C
C
C
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
GS
iss
rss
oss
1.2
= 0V,
= C
= C
= C
T = 25°C
J
gs
gd
ds
+ C
+ C
1.6
10
gd
gd
f = 1MHz
, C
2.0
ds
SHORTED
V
2.4
GS
= 0V
100
2.8
A
A
1000
100
20
16
12
10
8
4
0
1
0
1
I
T
T
Single Pulse
D
C
J
= 43A
= 25°C
= 175°C
20
OPERATION IN THIS AREA LIMITED
V
DS
Q , Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
40
BY R
60
V
V
10
DS
DS
DS(on)
80
= 44V
= 28V
FOR TEST CIRCUIT
SEE FIGURE 13
100
120
10µs
100µs
1ms
10ms
140
100
A
A