IRFI1010 International Rectifier, IRFI1010 Datasheet

IRFI1010

Manufacturer Part Number

IRFI1010

Description

Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)

Manufacturer

International Rectifier

Datasheet

1.IRFI1010.pdf (8 pages)

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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to using

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

Thermal Resistance

dv/dt

STG

@ T

Advanced Process Technology

Isolated Package

High Voltage Isolation = 2.5KVRMS

Sink to Lead Creepage Dist. = 4.8mm

Fully Avalanche Rated

= 25°C

= 100°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Junction-to-Case

Junction-to-Ambient

Parameter

@ 10V

300 (1.6mm from case )

Typ.

–––

HEXFET

10 lbf•in (1.1N•m)

-55 to + 175

TO-220 FULLPAK

Max.

0.38

290

± 20

360

5.8

5.0

IRFI1010N

DS(on)

Power MOSFET

Max.

DSS

2.6

= 49A

PD - 9.1373A

= 0.012

= 55V

Units

W/°C

°C/W

V/ns

°C

8/25/97

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