STD2NK100Z STMicroelectronics, STD2NK100Z Datasheet - Page 5
![MOSFET N-CH 1000V 1.85A DPAK](/photos/5/30/53090/497-dpak_to-252_sml.jpg)
STD2NK100Z
Manufacturer Part Number
STD2NK100Z
Description
MOSFET N-CH 1000V 1.85A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP2NK100Z.pdf
(16 pages)
Specifications of STD2NK100Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.85A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
499pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 Ohm @ 10 V
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7964-2
STD2NK100Z
STD2NK100Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD2NK100Z
Manufacturer:
ST
Quantity:
20 000
STD2NK100Z - STP2NK100Z - STU2NK100Z
Table 7.
Table 8.
1. Pulse width limited by package
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 9.
1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s
Symbol
Symbol
Symbol
I
BV
V
SDM
I
I
t
t
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the
usage of external components.
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
(1)
SD
t
t
t
t
GSO
rr
rr
r
r
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Switching times
Source drain diode
Gate-source zener diode
Parameter
Parameter
Parameter
I
I
V
(see Figure 21)
I
V
(see Figure 21)
I
V
R
(see Figure 16)
SD
SD
SD
GS
DD
DD
DD
G
= 1.85 A, V
= 1.85 A, di/dt= 100 A/µs,
= 1.85 A, di/dt= 100 A/µs,
=4.7 Ω, V
= ±1mA (open drain)
= 60 V
= 60 V, Tj=150 °C
= 500 V, I
Test conditions
Test conditions
Test conditions
GS
D
GS
= 0.9 A,
=10 V
=0
Electrical characteristics
Min.
Min.
Min.
30
Typ.
Typ.
Typ.
41.5
32.5
476
532
1.6
6.9
1.9
7.2
6.5
88
Max.
Max.
Max.
1.85
7.4
1.6
Unit
Unit
Unit
ns
ns
ns
ns
µC
µC
ns
ns
A
A
V
A
A
V
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