STD2NK100Z STMicroelectronics, STD2NK100Z Datasheet - Page 8

• Manufacturer Part Number: STD2NK100Z
• Description: MOSFET N-CH 1000V 1.85A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD2NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 1.85A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 499pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7964-2; STD2NK100Z

Electrical characteristics
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Figure 14. Source-drain diode forward
characteristics
Figure 15. Maximum avalanche energy vs
E
STD2NK100Z - STP2NK100Z - STU2NK100Z
AS(
190
180
170
160
150
140
130
120
110
100
mJ)
90
80
70
60
50
40
30
20
10
0
10
temperature
20
30
40
50
60
I
D
=1.85A
70
80
90
100
110
120
AM00056v1
130
140
T
J
(°C)