IRF1010EPBF International Rectifier, IRF1010EPBF Datasheet - Page 2

• Manufacturer Part Number: IRF1010EPBF
• Description: MOSFET N-CH 60V 84A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010EPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 84A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3210pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 84 A
• Gate Charge, Total: 130 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 12 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 48 ns
• Time, Turn-on Delay: 12 ns
• Transconductance, Forward: 69 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 81 A
• Mounting Style: Through Hole
• Gate Charge Qg: 86.6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1010EPBF

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

ƒ
‚
Notes:
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
E
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
2
fs
D
S
(BR)DSS
GS(th)
AS
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
I
T
(BR)DSS
R
max. junction temperature. (See fig. 11)
SD
Starting T
J
G
≤ 175°C
≤ 50A di/d ≤ 230A/µs, V
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
AS
= 25°C, L = 260µH
= 50A, V
GS

Parameter
Parameter
=10V (See Figure 12)
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
‚
„
…
†
‡
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
Calculated continuous current based on maximum allowable
This is a calculated value limited to T
operation outside rated limits.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1180…320†
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
60
69
–––
–––
–––
–––
–––
–––
junction temperature. Package limitation current is 75A.
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.064 –––
3210 –––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
690
140
220
–––
–––
–––
12
78
48
53
73
–––
–––
–––
250
100
130
–––
–––
–––
–––
–––
–––
–––
84‡
110
330
4.0
1.3
12
25
28
44
330
V/°C
mΩ
µA
nA
nC
ns
nH
mJ
nC
pF
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
AS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 50A
= 50A
= 25°C, I
= 25°C, I
= 50A, L = 260µH
= 3.6Ω
= 0V, I
= 10V, I
= V
= 25V, I
= 60V, V
= 48V, V
= 20V
= -20V
= 48V
= 10V, See Fig. 6 and 13
= 30V
= 10V, See Fig. 10 „
= 0V
= 25V
GS
J
, I
= 175°C .
D
S
F
D
D
D
Conditions
= 250µA
Conditions
GS
GS
= 50A
= 50A, V
= 50A
= 250µA
= 50A„
„
= 0V
= 0V, T
D
www.irf.com
GS
= 1mA
„
J
= 150°C
= 0V
G
G
S
„
+L
D
S
D
)
S
D