IRF1010EPBF International Rectifier, IRF1010EPBF Datasheet - Page 6
![MOSFET N-CH 60V 84A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF1010EPBF
Manufacturer Part Number
IRF1010EPBF
Description
MOSFET N-CH 60V 84A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF1010EPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
84A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
3210pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
84 A
Gate Charge, Total
130 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
12 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
48 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
69 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
81 A
Mounting Style
Through Hole
Gate Charge Qg
86.6 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1010EPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF1010EPBF
Manufacturer:
PANASONIC
Quantity:
10 000
Part Number:
IRF1010EPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF1010EPBF-MXG
Manufacturer:
IR
Quantity:
20 000
6
GS
V
I
G
AS
Q
R G
20V
V
GS
V DS
GS
t p
I AS
Charge
Q
Q
D.U.T
GD
G
t p
0.01 Ω
L
15V
V
(BR)DSS
DRIVER
+
-
V DD
A
800
600
400
200
0
25
Starting T , Junction Temperature ( C)
50
12V
V
GS
J
Same Type as D.U.T.
75
Current Regulator
.2µF
100
50KΩ
3mA
Current Sampling Resistors
.3µF
I
125
G
TOP
BOTTOM
www.irf.com
D.U.T.
150
I
D
°
I D
20A
35A
50A
175
+
-
V
DS