IRFU5305PBF International Rectifier, IRFU5305PBF Datasheet - Page 6

• Manufacturer Part Number: IRFU5305PBF
• Description: MOSFET P-CH 55V 31A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFU5305PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Channel Type: P
• Current, Drain: -31 A
• Gate Charge, Total: 63 nC
• Package Type: I-Pak (TO-251AA)
• Polarization: P-Channel
• Power Dissipation: 110 W
• Resistance, Drain To Source On: 0.065 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 39 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 8 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 28 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.065Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFU5305PBF

IRFR/U5305PbF
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
-10V
6
Fig 12a. Unclamped Inductive Test
V
I
AS
G
R
-20V
G
Q
V DS
GS
t p
I AS
D.U.T
Circuit
t p
0.01 Ω
L
Q
Charge
Q
GD
G
DRIVER
V
(BR)DSS
15V
+
-
V DD
A
700
600
500
400
300
200
100
0
Fig 13b. Gate Charge Test Circuit
25
Fig 12c. Maximum Avalanche Energy
V
DD
Starting T , Junction Temperature (°C)
12V
V
= -25V
GS
50
Same Type as D.U.T.
Current Regulator
.2µF
Vs. Drain Current
J
75
50KΩ
-3mA
Current Sampling Resistors
.3µF
100
I
G
D.U.T.
125
www.irf.com
TOP
BOTTOM
I
D
150
+
-
V
DS
-11A
-6.6A
-16A
I
D
175
A