IRF6665TR1PBF International Rectifier, IRF6665TR1PBF Datasheet - Page 2

• Manufacturer Part Number: IRF6665TR1PBF
• Description: MOSFET N-CH 100V 4.2A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6665TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SH
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.2 A
• Power Dissipation: 42 W
• Gate Charge Qg: 8.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6665TR1PBFTR

IRF6665PbF
Notes:

‚
ƒ
„
…
Static @ T
V
∆V
R
V
I
I
R
Dynamic @ T
gfs
Q
Q
t
t
t
t
C
C
C
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
(BR)DSS
GS(th)
AS
SD
DS(on)
G(int)
g
sw
iss
oss
rss
oss
oss
oss
rr
Q
Q
Q
Q
Repetitive rating; pulse width limited by
Starting T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
2
(BR)DSS
Surface mounted on 1 in. square Cu board.
charging time as C
max. junction temperature.
gs1
gs2
gd
godr
oss
eff.
eff. is a fixed capacitance that gives the same
/∆T
J
J
= 25°C, L = 0.89mH, R
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25°C (unless otherwise specified)
oss
while V
Parameter
DS
Ù
Parameter
Parameter
is rising from 0 to 80% V
Parameter
G
gs2
Ù
= 25Ω, I
+ Q
gd
)
AS
= 5.0A.
DSS
.
Min.
Min.
Min.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
6.6
†
‡
ˆ
‰
Š
Typ.
Typ.
Typ.
0.12
0.64
–––
–––
–––
–––
–––
–––
–––
530
110
510
130
–––
–––
–––
1.9
8.4
2.2
2.8
2.8
3.4
7.4
2.8
4.3
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
T
(Drain) of part.
R
Based on testing done using a typical device & evaluation board
at Vbus=±45V, f
temperature
53
14
29
67
31
37
C
θ
measured with thermal couple mounted to top
is measured at T
Max.
Max.
Max.
-100
Typ.
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.0
1.3
2.9
62
20
13
38
34
∆
T
C
SW
is 55°C.
Units
Units
Units
=400KHz, and T
V/°C
mΩ
nC
nC
µA
nA
pF
ns
ns
J
V
V
Ω
S
A
V
of approximately 90°C.
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 6 and 17
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 5.0A
= 5.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= 0V, I
= 10V, I
= V
= 100V, V
= 80V, V
= 20V
= -20V
= 10V, I
= 50V
= 10V
= 50V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
A
Max.
=25°C. The delta case
, I
5.0
11
D
f
D
DS
S
F
D
D
Conditions
Conditions
DS
DS
Conditions
= 250µA
GS
= 250µA
= 5.0A, V
= 5.0A
= 5.0A, V
= 5.0A
GS
= 0V to 80V
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
= 0V, T
f
= 0V
D
f
www.irf.com
= 1mA
DD
J
GS
G
= 125°C
= 25V
= 0V
g
Units
mJ
A
f
D
S