IRF6665TR1PBF International Rectifier, IRF6665TR1PBF Datasheet - Page 8

• Manufacturer Part Number: IRF6665TR1PBF
• Description: MOSFET N-CH 100V 4.2A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6665TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SH
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.2 A
• Power Dissipation: 42 W
• Gate Charge Qg: 8.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6665TR1PBFTR

IRF6665PbF
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This
includes all recommendations for stencil and substrate designs.
8
™
™
CODE
A
B
C
D
E
F
G
H
K
L
M
R
P
4.75
3.70
2.75
0.35
0.58
0.58
0.63
0.83
0.99
2.29
0.616
0.020
0.08
MIN
METRIC
DIMENSIONS
1.03
4.85
3.95
2.85
0.45
0.62
0.62
0.67
0.87
2.33
0.676
0.080
0.17
MAX
0.187
0.146
0.108
0.014
0.023
0.023
0.025
0.033
0.039
0.090
0.0235
0.0008
0.003
MIN
IMPERIAL
0.191
0.156
0.112
0.018
0.024
0.024
0.026
0.034
0.041
0.092
0.0274
0.0031
0.007
MAX
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