STB100NF04T4 STMicroelectronics, STB100NF04T4 Datasheet - Page 6

• Manufacturer Part Number: STB100NF04T4
• Description: MOSFET N-CH 40V 120A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB100NF04T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0046 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 150 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5951-2

Electrical characteristics
2.1
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Figure 1.
Figure 3.
Figure 5.
Power Derating vs. Tc
Output Characteristics
Transconductance
Electrical characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
Max Id Current vs. Tc
Transfer Characteristics
Static Drain-source on Resistance
STB100NF04 - STP100NF04