STB7NK80ZT4 STMicroelectronics, STB7NK80ZT4 Datasheet - Page 3

• Manufacturer Part Number: STB7NK80ZT4
• Description: MOSFET N-CH 800V 5.2A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB7NK80ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1138pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6557-2; STB7NK80ZT4

STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
V
Symbol
Symbol
R
Symbol
R
dv/dt
ESD(G-S)
I
thj-case
DM
P
V
thj-amb
E
V
V
T
I
SD
T
AR
TOT
I
I
T
ISO
AS
GS
DS
stg
D
D
l
j
(2)
(3)
≤ 5.2 A, di/dt ≤ 200 A/µs, V
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting T
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD
(HBM-C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; T
Max operating junction temperature
Storage temperature
Avalanche characteristics
Absolute maximum ratings
Thermal data
C
= 25 °C)
J
= 25 °C, I
Parameter
Parameter
Parameter
C
DD
D
Doc ID 8979 Rev 6
= 25°C
= I
GS
≤ V
AR
= 0)
(BR)DSS
, V
DD
C
C
= 25 °C
= 100 °C
= 50 V)
, T
j
≤ T
JMAX.
TO-220 D
TO-220 D
20.8
125
2
5.2
3.3
2
PAK I
1
1
PAK I
-55 to 150
Value
Value
4000
± 30
62.5
800
300
4.5
2
2
PAK TO-220FP
Value
PAK TO-220FP
210
5.2
Electrical ratings
20.8
5.2
3.3
2500
0.24
4.2
30
(1)
(1)
(1)
°C/W
°C/W
W/°C
V/ns
Unit
Unit
Unit
mJ
°C
°C
°C
W
A
V
V
A
A
A
V
V
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