STB7NK80ZT4 STMicroelectronics, STB7NK80ZT4 Datasheet - Page 4

• Manufacturer Part Number: STB7NK80ZT4
• Description: MOSFET N-CH 800V 5.2A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB7NK80ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1138pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6557-2; STB7NK80ZT4

Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
V
Symbol
Symbol
C
R
CASE
V
(BR)DSS
t
g
t
C
t
I
I
oss eq.
r(Voff)
increases from 0 to 80% V
DS(on)
C
GS(th)
C
Q
Q
d(on)
r(off)
DSS
GSS
fs
Q
(2)
t
oss eq.
oss
t
t
t
rss
iss
gd
c
r
r
gs
r
g
(1)
= 25 °C unless otherwise specified)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Off-voltage rise time
Fall time
Cross-over time
Drain-source
Breakdown voltage
Zero gate voltage
Drain Current (V
Gate-body leakage
Current (V
Gate threshold voltage
Static drain-source on
resistance
Dynamic
On/off states
Parameter
Parameter
DS
= 0)
DSS
GS
.
= 0)
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
V
V
V
V
R
(see
V
V
(see
V
R
(see
I
V
V
V
V
V
D
DS
DS
GS
DS
DD
DD
GS
DD
GS
GS
G
G
DS
DS
DS
=1 mA, V
= 4.7 Ω, V
= 4.7 Ω, V
= Max rating
= Max rating, T
= 15 V, I
= 25 V, f = 1 MHz,
= 0
=0 , V
= 10 V
= V
= 400 V, I
= 640 V, I
= 640 V, I
= ± 20 V
= 10 V, I
Figure
Figure
Figure
Test conditions
Test conditions
GS
DS
, I
GS
17)
18)
17)
D
D
D
= 0 to 640 V
GS
GS
D
D
D
= 100 µA
= 2.6 A
= 2.6 A
= 0
= 2.6 A,
= 5.2 A,
= 5.2 A,
= 10 V
= 10 V
C
= 125 °C
Min.
Min.
800
3
-
-
-
-
-
-
1138
Typ. Max.
Typ. Max. Unit
3.75
122
1.5
25
50
20
12
45
20
40
21
12
10
20
5
7
oss
when V
± 10
4.5
1.8
56
50
1
DS
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
Ω
V
V
S