IRFP064VPBF International Rectifier, IRFP064VPBF Datasheet - Page 2

• Manufacturer Part Number: IRFP064VPBF
• Description: MOSFET N-CH 60V 130A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP064VPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 78A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 6760pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Current, Drain: 130 A
• Gate Charge, Total: 260 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 250 W
• Resistance, Drain To Source On: 5.5 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 100 ns
• Time, Turn-on Delay: 26 ns
• Transconductance, Forward: 88 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 m Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 130 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 150 ns
• Gate Charge Qg: 173.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 200 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFP064VPBF

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

ƒ
‚
Notes:
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
E
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
2
fs
D
S
(BR)DSS
GS(th)
AS
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
I
T
(BR)DSS
max. junction temperature. (See fig. 11)
R
SD
Starting T
J
G
≤ 175°C
≤ 130A di/d ≤ 230A/µs, V
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 260µH
AS
= 50A. (See Figure 12)

Parameter
Parameter
DD
≤ V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
‚
„
…
†
‡
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
This is a calculated value limited to T
Calculated continuous current based on maximum allowable
operation outside rated limits.
junction temperature. Package limitation current is 90A.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1880…310†
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
60
88
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.067 –––
6760 –––
1330 –––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
200
100
150
290
360
–––
–––
–––
5.0
13
26
94
130‡
–––
–––
–––
250
100
260
–––
–––
–––
–––
–––
–––
140
540
5.5
4.0
1.2
25
68
94
520
V/°C
mΩ
µA
nA
nC
ns
nH
mJ
nC
pF
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
AS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 130A
= 130A
= 25°C, I
= 25°C, I
= 130A, L = 37µH
= 4.3Ω
= 0V, I
= 10V, I
= V
= 25V, I
= 60V, V
= 48V, V
= 20V
= -20V
= 48V
= 10V, See Fig. 6 and 13
= 30V
= 10V, See Fig. 10
= 0V
= 25V
J
GS
= 175°C .
, I
D
S
F
D
D
D
Conditions
= 250µA
Conditions
GS
GS
= 130A
= 130A, V
= 78A
= 250µA
= 78A
„
= 0V
= 0V, T
„
D
= 1mA
„
GS
J
„
= 150°C
G
= 0V
G
S
+L
„
D
S
D
)
S
D