IRFP064VPBF International Rectifier, IRFP064VPBF Datasheet

MOSFET N-CH 60V 130A TO-247AC

IRFP064VPBF

Manufacturer Part Number
IRFP064VPBF
Description
MOSFET N-CH 60V 130A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRFP064VPBF.pdf (8 pages)
2.IRFP064VPBF.pdf (3 pages)

Specifications of IRFP064VPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 78A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
6760pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Current, Drain
130 A
Gate Charge, Total
260 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
250 W
Resistance, Drain To Source On
5.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
100 ns
Time, Turn-on Delay
26 ns
Transconductance, Forward
88 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.5 m Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
130 A
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
150 ns
Gate Charge Qg
173.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
200 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP064VPBF
l
l
l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole.
www.irf.com
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.24
–––
IRFP064VPbF
–––
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
S
D
Max.
130
520
250
± 20
130
1.7
4.7
95
25
‡
TO-247AC
®
R
Power MOSFET
DS(on)
Max.
I
V
0.60
–––
D
40
DSS
= 130A‡
PD - 95501A
= 5.5mΩ
= 60V
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1

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IRFP064VPBF Summary of contents

Page 1

... Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G @ 10V GS @ 10V GS    ƒ 300 (1.6mm from case ) Typ. 0. 95501A IRFP064VPbF ® HEXFET Power MOSFET 60V DSS R = 5.5mΩ DS(on 130A‡ TO-247AC Max. Units ‡ 130 95 A 520 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

Page 4

0V MHZ C iss = rss = C gd 10000 C oss = 8000 Ciss 6000 4000 Coss 2000 ...

Page 5

LIMITED BY PACKAGE 120 100 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 ...

Page 6

D.U 20V 0.01 Ω Charge 6 600 15V DRIVER 450 + 300 150 V ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

EXAMPLE: THIS IS AN IRFPE30 WIT H ASS EMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" Notes: 1. For an Automotive Qualified version of ...

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