IXKP10N60C5 IXYS, IXKP10N60C5 Datasheet - Page 2

• Manufacturer Part Number: IXKP10N60C5
• Description: MOSFET N-CH 600V 10A TO220AB
• Manufacturer: IXYS
• Series: CoolMOS™r

Specifications of IXKP10N60C5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3.5V @ 340µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 790pF @ 100V
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 10
• Rds(on), Max, Tj=25°c, (?): 0.385
• Ciss, Typ, (pf): 790
• Qg, Typ, (nc): 17
• Trr, Max, (ns): -
• Trr, Typ, (ns): 260
• Pd, (w): 109
• Rthjc, Max, (k/w): 1.15
• Visol, Rms, (v): -
• Package Style: TO220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / Rohs Status: Details

IXYS reserves the right to change limits, test conditions and dimensions.
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Source-Drain Diode
Symbol
I
V
t
Q
I
Component
Symbol
T
T
M
Symbol
R
Weight
S
RM
rr
SD
VJ
stg
thCH
RM
d
Conditions
V
I
I
Conditions
operating
mounting torque
Conditions
with heatsink compound
F
F
GS
= 5.2 A; V
= 5.2 A; -di
= 0 V
GS
F
/dt = 100 A/µs; V
= 0 V
R
(T
= 400 V
VJ
= 25°C, unless otherwise specifi ed)
min.
min.
Characteristic Values
Characteristic Values
Maximum Ratings
0.50
typ.
typ.
260
0.9
3.1
24
-55...+150
-55...+150
2
0.4 ... 0.6
max.
max.
5.2
1.2
K/W
Nm
µC
°C
°C
ns
A
V
A
g
IXKP 10N60C5
20090209c
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