IXKP10N60C5 IXYS, IXKP10N60C5 Datasheet - Page 3

• Manufacturer Part Number: IXKP10N60C5
• Description: MOSFET N-CH 600V 10A TO220AB
• Manufacturer: IXYS
• Series: CoolMOS™r

Specifications of IXKP10N60C5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3.5V @ 340µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 790pF @ 100V
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 10
• Rds(on), Max, Tj=25°c, (?): 0.385
• Ciss, Typ, (pf): 790
• Qg, Typ, (nc): 17
• Trr, Max, (ns): -
• Trr, Typ, (ns): 260
• Pd, (w): 109
• Rthjc, Max, (k/w): 1.15
• Visol, Rms, (v): -
• Package Style: TO220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / Rohs Status: Details

TO-220 AB Outline
IXYS reserves the right to change limits, test conditions and dimensions.
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120
100
80
60
40
20
0
0
Fig. 1 Power dissipation
40
T
C
80
[°C]
120
160
25
20
15
10
5
0
0
Fig. 2 Typ. output characteristics
T
J
= 25°C
5
10 V
20 V
V
DS
10
[V]
7 V
V
8 V
GS
=
6 V
5.5 V
5 V
4.5 V
15
20
16
14
12
10
8
6
4
2
0
0
Fig. 3 Typ. output characteristics
T
J
= 150°C
IXKP 10N60C5
5
V
GS
V
=
DS
10
[V]
20 V
10 V
15
6 V
20090209c
5 V
4.5 V
7 V
3 - 4
5.5 V
8 V
20