STB40NS15T4 STMicroelectronics, STB40NS15T4 Datasheet - Page 3

• Manufacturer Part Number: STB40NS15T4
• Description: MOSFET N-CH 150V 40A D2PAK
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STB40NS15T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2420pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.045 Ohms
• Forward Transconductance Gfs (max / Min): 29.4 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7948-2; STB40NS15T4

STB40NS15
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area.
Table 3.
Table 4.
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
V
I
E
dv/dt
I
DM
V
V
T
T
P
AR
DGR
AS
I
I
T
DS
GS
stg
J
D
D
tot
j
(1)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj = 25 °C, I
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery avalanche energy
Storage temperature
Max. operating junction temperature
Parameter
D
C
= I
GS
= 25°C
GS
AR
Parameter
Parameter
= 20 kΩ)
, V
= 0)
DD
C
C
= 50 V)
= 25°C
= 100°C
-65 to 175
Value
± 20
150
150
160
300
40
25
2
7
Max value
Electrical ratings
value
62.5
300
350
0.5
40
W/°C
V/ns
Unit
°C
W
V
V
A
A
V
A
°C/W
°C/W
Unit
Unit
mJ
°C
A
3/13