STB40NS15T4 STMicroelectronics, STB40NS15T4 Datasheet - Page 6

• Manufacturer Part Number: STB40NS15T4
• Description: MOSFET N-CH 150V 40A D2PAK
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STB40NS15T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2420pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.045 Ohms
• Forward Transconductance Gfs (max / Min): 29.4 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7948-2; STB40NS15T4

Electrical characteristics
2.1
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Figure 2.
Figure 4.
Figure 6.
Safe operating area
Output characterisics
Transconductance
Electrical characteristics (curves)
Figure 3.
Figure 5.
Figure 7.
Thermal impedance
Transfer characteristics
Static drain-source on resistance
STB40NS15