STD11NM60ND STMicroelectronics, STD11NM60ND Datasheet - Page 11
![MOSFET N-CH 600V 10A DPAK](/photos/5/30/53090/497-dpak_to-252_sml.jpg)
STD11NM60ND
Manufacturer Part Number
STD11NM60ND
Description
MOSFET N-CH 600V 10A DPAK
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet
1.STP11NM60ND.pdf
(19 pages)
Specifications of STD11NM60ND
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.45 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
10 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
9 ns
Rise Time
7 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8477-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STD/F/I/P/U11NM60ND
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 14625 Rev 2
Package mechanical data
11/19
®