STD11NM60ND STMicroelectronics, STD11NM60ND Datasheet - Page 12
![MOSFET N-CH 600V 10A DPAK](/photos/5/30/53090/497-dpak_to-252_sml.jpg)
STD11NM60ND
Manufacturer Part Number
STD11NM60ND
Description
MOSFET N-CH 600V 10A DPAK
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet
1.STP11NM60ND.pdf
(19 pages)
Specifications of STD11NM60ND
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.45 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
10 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
9 ns
Rise Time
7 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8477-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Package mechanical data
12/19
Table 9.
Figure 24. TO-220FP drawing
Dim.
Dia
G1
F1
F2
L2
L3
L4
L5
L6
L7
G
A
B
D
E
F
H
TO-220FP mechanical data
A
B
H
Min.
0.45
0.75
1.15
1.15
4.95
28.6
15.9
4.4
2.5
2.5
2.4
9.8
2.9
10
9
3
Dia
Doc ID 14625 Rev 2
L6
L2
L7
L3
Typ.
mm
L5
16
F1
D
L4
F2
STD/F/I/P/U11NM60ND
F
E
G1
Max.
2.75
1.70
1.70
10.4
30.6
10.6
16.4
4.6
2.7
0.7
5.2
2.7
3.6
9.3
3.2
1
7012510_Rev_K
G