IXFA12N50P IXYS, IXFA12N50P Datasheet - Page 4

• Manufacturer Part Number: IXFA12N50P
• Description: MOSFET N-CH 500V 12A D2-PAK
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFA12N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5.5V @ 1mA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1830pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 0.5
• Ciss, Typ, (pf): 1830
• Qg, Typ, (nc): 29
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 200
• Rthjc, Max, (ºc/w): 0.62
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
20
18
16
14
12
10
35
30
25
20
15
10
10
8
6
4
2
0
5
0
0.4
4.5
0
Fig. 9. Source Current vs. Source-To-Drain
f
= 1 MHz
5
0.5
5.0
Fig. 11. Capacitance
Fig. 7. Input Admittance
10
T
T
J
0.6
5.5
J
= 125 º C
= 125 º C
15
- 40ºC
V
V
V
25ºC
G S
S D
D S
Voltage
- Volts
- Volts
0.7
20
6.0
- Volts
25
C
C
0.8
C
6.5
iss
oss
rss
T
30
J
= 25 º C
0.9
7.0
35
1.0
40
7.5
100
27
24
21
18
15
12
10
10
9
6
3
0
1
9
8
7
6
5
4
3
2
1
0
10
0
0
T
J
V
I
I
= - 40 º C
2
D
G
3
DS
125 º C
= 6A
= 10m A
25 º C
R
Fig. 8. Transconductance
= 250V
4
DS(on)
6
Fig. 10. Gate Charge
Fig. 12. Forward-Bias
Safe Operating Area
6
Q
9
Limit
G
I
12
V
- nanoCoulombs
8
D
D S
- Amperes
DC
100
10
15
- Volts
12
18
IXFP12N50P
IXFA12N50P
14
21
T
T
J
C
= 150ºC
= 25ºC
16
24
100µs
18
25µs
1m s
27
10ms
1000
20
30