IXFA12N50P IXYS, IXFA12N50P Datasheet - Page 5

• Manufacturer Part Number: IXFA12N50P
• Description: MOSFET N-CH 500V 12A D2-PAK
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFA12N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5.5V @ 1mA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1830pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 0.5
• Ciss, Typ, (pf): 1830
• Qg, Typ, (nc): 29
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 200
• Rthjc, Max, (ºc/w): 0.62
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
1.00
0.10
0.01
0.01
0.1
Fig. 13. Maximum Transient Thermal Impedance
Pulse Width - milliseconds
1
10
100
IXYS REF: T_12N50P(4J)4-14-08-D
IXFA12N50P
IXFP12N50P
1000