IXTP60N10T IXYS, IXTP60N10T Datasheet - Page 2

• Manufacturer Part Number: IXTP60N10T
• Description: MOSFET N-CH 100V 60A TO-220
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTP60N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2650pF @ 25V
• Power - Max: 176W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Forward Transconductance Gfs (max / Min): 42 s
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 60 A
• Power Dissipation: 176 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.0180
• Ciss, Typ, (pf): 2650
• Qg, Typ, (nc): 49
• Trr, Typ, (ns): 59
• Trr, Max, (ns): -
• Pd, (w): 176
• Rthjc, Max, (k/w): 0.85
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
I
Q
Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
SD
iss
oss
rss
thJC
thCH
g(on)
gs
gd
RM
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
2. On through-hole packages, R
5mm or less from the package body.
Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-220
Test Conditions
V
Repetitive, pulse width limited by T
I
I
-di/dt = 100A/μs
V
F
F
DS
GS
GS
GS
GS
R
G
= 25A, V
= 0.5 • I
= 0.5 • V
= 10V, I
= 10V, V
= 0V, V
= 10V, V
= 15Ω (External)
= 0V
S
, V
GS
D
DS
DSS
DS
= 0.5 • I
DS
= 0V, Note 1
GS
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
= 0V
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 10A
= 10A
Kelvin test contact location must be
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
25
6,162,665
6,259,123 B1
6,306,728 B1
2650
Typ.
Typ.
335
112
0.50
3.8
60
27
40
43
37
49
15
11
59
42
0.85 °C/W
240
1.2
60
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
°C/W
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
3 - Source 4, TAB - Drain
3 - Source 4, TAB - Drain
14.61
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
Millimeter
0
7,005,734 B2
7,063,975 B2
10.29
15.88
Max.
BSC
IXTA60N10T
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
IXTP60N10T
2 - Drain
2 - Drain
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
Inches
0
7,157,338B2
Max.
BSC
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029