IXTP60N10T IXYS, IXTP60N10T Datasheet - Page 2
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IXTP60N10T
Manufacturer Part Number
IXTP60N10T
Description
MOSFET N-CH 100V 60A TO-220
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet
1.IXTP60N10T.pdf
(5 pages)
Specifications of IXTP60N10T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
2650pF @ 25V
Power - Max
176W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohms
Forward Transconductance Gfs (max / Min)
42 s
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
60 A
Power Dissipation
176 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.0180
Ciss, Typ, (pf)
2650
Qg, Typ, (nc)
49
Trr, Typ, (ns)
59
Trr, Max, (ns)
-
Pd, (w)
176
Rthjc, Max, (k/w)
0.85
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP60N10T
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
I
Q
Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
SD
iss
oss
rss
thJC
thCH
g(on)
gs
gd
RM
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
2. On through-hole packages, R
5mm or less from the package body.
Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-220
Test Conditions
V
Repetitive, pulse width limited by T
I
I
-di/dt = 100A/μs
V
F
F
DS
GS
GS
GS
GS
R
G
= 25A, V
= 0.5 • I
= 0.5 • V
= 10V, I
= 10V, V
= 0V, V
= 10V, V
= 15Ω (External)
= 0V
S
, V
GS
D
DS
DSS
DS
= 0.5 • I
DS
= 0V, Note 1
GS
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
= 0V
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 10A
= 10A
Kelvin test contact location must be
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
25
6,162,665
6,259,123 B1
6,306,728 B1
2650
Typ.
Typ.
335
112
0.50
3.8
60
27
40
43
37
49
15
11
59
42
0.85 °C/W
240
1.2
60
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
°C/W
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
3 - Source 4, TAB - Drain
3 - Source 4, TAB - Drain
14.61
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
Millimeter
0
7,005,734 B2
7,063,975 B2
10.29
15.88
Max.
BSC
IXTA60N10T
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
IXTP60N10T
2 - Drain
2 - Drain
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
Inches
0
7,157,338B2
Max.
BSC
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029