IXTP60N10T IXYS, IXTP60N10T Datasheet - Page 4

MOSFET N-CH 100V 60A TO-220

IXTP60N10T

Manufacturer Part Number
IXTP60N10T
Description
MOSFET N-CH 100V 60A TO-220
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTP60N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
2650pF @ 25V
Power - Max
176W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohms
Forward Transconductance Gfs (max / Min)
42 s
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
60 A
Power Dissipation
176 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.0180
Ciss, Typ, (pf)
2650
Qg, Typ, (nc)
49
Trr, Typ, (ns)
59
Trr, Max, (ns)
-
Pd, (w)
176
Rthjc, Max, (k/w)
0.85
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP60N10T
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
IXTP60N10T
Quantity:
3 000
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
100
180
160
140
120
100
90
80
70
60
50
40
30
20
10
10
80
60
40
20
0
0
4.0
0.4
0
f
0.5
= 1 MHz
5
4.5
Fig. 9. Forward Voltage Drop of
0.6
10
Fig. 7. Input Admittance
5.0
Fig. 11. Capacitance
0.7
T
J
Intrinsic Diode
= 150ºC
T
J
15
= 150ºC
V
0.8
V
V
GS
SD
- 40ºC
DS
5.5
25ºC
- Volts
- Volts
- Volts
0.9
20
6.0
1.0
T
25
J
= 25ºC
C iss
C oss
C rss
1.1
6.5
30
1.2
7.0
35
1.3
1.4
7.5
40
1.00
0.10
0.01
70
60
50
40
30
20
10
0.00001
10
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
10
5
D
G
DS
0.0001
= 10A
= 10mA
Fig. 12. Maximum Transient Thermal
= 50V
10
20
Fig. 8. Transconductance
15
0.001
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
30
G
- NanoCoulombs
I
D
20
Impedance
- Amperes
40
0.01
25
50
30
IXYS REF: T_60N10T(2V)8-07-08-A
0.1
60
IXTA60N10T
IXTP60N10T
35
T
J
70
= - 40ºC
40
150ºC
1
25ºC
80
45
10
50
90

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