IRF540NPBF International Rectifier, IRF540NPBF Datasheet - Page 2

• Manufacturer Part Number: IRF540NPBF
• Description: MOSFET N-CH 100V 33A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF540NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Input Capacitance (ciss) @ Vds: 1960pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 33 A
• Gate Charge, Total: 71 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 130 W
• Resistance, Drain To Source On: 44 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 39 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 21 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 33 A
• Mounting Style: Through Hole
• Gate Charge Qg: 47.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF540NPBF

Source-Drain Ratings and Characteristics
IRF540NPbF
Electrical Characteristics @ T
Notes:
I
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
E
I
I
V
t
Q
t
L
L
DSS
GSS
SM
d(on)
d(off)
S
rr
on
r
f
2
fs
D
S
(BR)DSS
GS(th)
AS
SD
DS(on)
iss
oss
rss
rr
g
gs
gd
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. (See fig. 11)
R
Starting T
G
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L =1.5mH
AS
= 16A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
T
This is a calculated value limited to T
operation outside rated limits.
SD
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 700
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
21
–––
J
≤ 175°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ 16A, di/dt ≤ 340A/µs, V
1960 –––
0.12
505
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
250
–––
–––
–––
115
4.5
11
35
39
35
40
7.5
185
–––
170
760
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
1.2
4.0
44
25
71
14
110
21
33
V/°C Reference to 25°C, I
mΩ
mJ
nC
µA
nA
nC
ns
nH
pF
ns
V
V
S
A
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
I
DD
D
D
AS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 16A
= 16A
= 25°C, I
= 25°C, I
≤ V
= 16A, L = 1.5mH
= 5.1Ω
= V
= 50V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 50V
= 10V, See Fig. 10
= 0V
(BR)DSS
GS
J
, I
= 175°C .
D
S
F
D
D
D
Conditions
= 250µA
GS
Conditions
= 16A
= 16A, V
,
= 250µA
= 16A
= 16A
GS
= 0V, T
= 0V
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D
GS
= 1mA
J
= 150°C
= 0V
G
G
S
+L
D
S
D
)
S
D