IRF540NPBF International Rectifier, IRF540NPBF Datasheet - Page 6

• Manufacturer Part Number: IRF540NPBF
• Description: MOSFET N-CH 100V 33A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF540NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Input Capacitance (ciss) @ Vds: 1960pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 33 A
• Gate Charge, Total: 71 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 130 W
• Resistance, Drain To Source On: 44 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 39 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 21 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 33 A
• Mounting Style: Through Hole
• Gate Charge Qg: 47.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF540NPBF

IRF540NPbF
Fig 13a. Basic Gate Charge Waveform
6
Fig 12a. Unclamped Inductive Test Circuit
V
Fig 12b. Unclamped Inductive Waveforms
GS
V
I
G
AS
Q
GS
R G
20V
V DS
t p
Charge
Q
Q
GD
G
t p
I AS
D.U.T
0.01 Ω
L
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
400
300
200
100
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature ( C)
12V
50
V
GS
Same Type as D.U.T.
Vs. Drain Current
J
Current Regulator
75
.2µF
50KΩ
3mA
100
Current Sampling Resistors
.3µF
I
G
www.irf.com
125
TOP
BOTTOM
D.U.T.
150
I
D
11.3A
°
6.5A
I D
16A
175
+
-
V
DS