IRF2807SPBF International Rectifier, IRF2807SPBF Datasheet

MOSFET N-CH 75V 82A D2PAK

IRF2807SPBF

Manufacturer Part Number
IRF2807SPBF
Description
MOSFET N-CH 75V 82A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF2807SPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13 mOhm @ 43A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
82A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
3820pF @ 25V
Power - Max
230W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Current, Drain
82 A
Gate Charge, Total
160 nC
Package Type
D2Pak
Polarization
N-Channel
Power Dissipation
230 W
Resistance, Drain To Source On
13 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
49 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
38 S
Voltage, Breakdown, Drain To Source
75 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
13 m Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
82 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
48 ns
Gate Charge Qg
106.7 nC
Minimum Operating Temperature
- 55 C
Rise Time
64 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF2807SPBF
Thermal Resistance
l
l
l
l
l
l
l
Absolute Maximum Ratings
www.irf.com
Description
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF2807L) is available for low-
profile applications.
R
R
I
I
I
P
V
I
E
dv/dt
T
T
D
D
DM
AR
J
STG
θJC
θJA
D
GS
AR
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
2
C
C
C
Pak is a surface mount power package capable of
= 25°C
= 100°C
= 25°C
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Peak Diode Recovery dv/dt
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
®
Power MOSFETs from International
Parameter
Parameter

2

Pak is suitable for
ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
IRF2807SPbF
IRF2807LPbF
10 lbf•in (1.1N•m)
HEXFET
IRF2807SPbF
-55 to + 175
S
D
D
Max.
82
280
230
± 20
1.5
5.9
2
58
43
23
Pak
®
R
Power MOSFET
Max.
DS(on)
0.75
V
40
I
D
DSS
IRF2807LPbF
= 82A‡
TO-262
PD - 95945
= 75V
= 13mΩ
Units
Units
°C/W
W/°C
V/ns
mJ
°C
W
A
V
A
1

Related parts for IRF2807SPBF

IRF2807SPBF Summary of contents

Page 1

... Typ. ––– ––– 95945 IRF2807SPbF IRF2807LPbF ® HEXFET Power MOSFET 75V DSS R = 13mΩ DS(on 82A‡ Pak TO-262 IRF2807SPbF IRF2807LPbF Max. Units ‡ 280 230 W 1.5 W/°C ± 5.9 V/ns - 175 °C 10 lbf•in (1.1N•m) Max ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° ...

Page 4

0V MHZ C iss = 6000 C rss = oss = 5000 Ciss 4000 3000 Coss 2000 ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 600 15V 500 DRIVER 400 + ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

Dimensions are shown in millimeters (inches ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information E X AMP COD ...

Page 10

D Pak Tape & Reel Infomation TRR FEED DIRECTION FEED DIRECTION NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 Kansas St., ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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