IRF2807SPBF International Rectifier, IRF2807SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF2807SPBF
• Description: MOSFET N-CH 75V 82A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF2807SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 82A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 3820pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 82 A
• Gate Charge, Total: 160 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 230 W
• Resistance, Drain To Source On: 13 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 49 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 38 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 m Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 82 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 48 ns
• Gate Charge Qg: 106.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 64 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF2807SPBF

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1000
1000
100
100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
10
0.1
4.0
TOP
BOTTOM
V
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
5.0
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
1
J
6.0
°
4.5V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
7.0
J
DS
T = 175 C
J
10
= 25V
°
8.0
°
100
9.0
1000
100
Fig 2. Typical Output Characteristics
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
71A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
1
20 40 60 80 100 120 140 160 180
4.5V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100