IXTP1N120P IXYS, IXTP1N120P Datasheet - Page 2

MOSFET N-CH 1200V 1A TO-220

IXTP1N120P

Manufacturer Part Number
IXTP1N120P
Description
MOSFET N-CH 1200V 1A TO-220
Manufacturer
IXYS
Series
PolarVHV™r
Datasheet

Specifications of IXTP1N120P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
17.6nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
63W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
20 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
63 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
1.0
Rds(on), Max, Tj=25°c, (?)
20
Ciss, Typ, (pf)
445
Qg, Typ, (nc)
17.6
Trr, Typ, (ns)
900
Pd, (w)
63
Rthjc, Max, (k/w)
2.0
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP1N120P
Manufacturer:
IXYS
Quantity:
18 000
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
TO-263 (IXTA) Outline
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
J
= 25°C, unless otherwise specified)
Test Conditions
V
V
Resistive Switching Times
V
R
V
(TO-220)
Test Conditions
V
Repetitive
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 1.0A, -di/dt = 100A/μs,
= 100V, V
= 30V, I
= 30Ω (External)
= 10V, V
= 0V, V
= 10V, V
= 0V
S
, V
GS
= 0V, Note 1
D
DS
DS
= 0.5 • I
DS
GS
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
(T
J
D25
D25
= 25°C, unless otherwise specified)
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
0.55
Min.
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
17.6
10.6
0.92
Typ.
550
Typ.
5.4
3.5
0.5
900
25
54
20
28
27
2.0 °C/W
6,404,065 B1
6,534,343
6,583,505
1.0 A
3.0 A
1.5 V
Max.
Max.
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-220 (IXTP) Outline
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
IXTA1N120P
IXTP1N120P
2 - Drain
7,157,338B2

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