IXTP1N120P IXYS, IXTP1N120P Datasheet - Page 3
IXTP1N120P
Manufacturer Part Number
IXTP1N120P
Description
MOSFET N-CH 1200V 1A TO-220
Manufacturer
IXYS
Series
PolarVHV™r
Datasheet
1.IXTP1N120P.pdf
(4 pages)
Specifications of IXTP1N120P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
17.6nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
63W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
20 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
63 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
1.0
Rds(on), Max, Tj=25°c, (?)
20
Ciss, Typ, (pf)
445
Qg, Typ, (nc)
17.6
Trr, Typ, (ns)
900
Pd, (w)
63
Rthjc, Max, (k/w)
2.0
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTP1N120P
Manufacturer:
IXYS
Quantity:
18 000
© 2007 IXYS CORPORATION, All rights reserved
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1
0
-50
-50
0
Fig. 3. R
V
GS
Fig. 1. Output Characteristics @ 25ºC
-25
-25
Fig. 5. Maximum Drain Current vs.
= 10V
5
DS(on)
vs. Junction Temperature
0
0
T
T
10
C
J
Case Temperature
- Degrees Centigrade
- Degrees Centigrade
Normalized to I
25
25
V
DS
15
- Volts
50
50
V
I
GS
D
20
= 1A
= 10V
75
75
6V
5V
7V
D
= 0.5A Value
25
I
D
100
100
= 0.5A
30
125
125
150
35
150
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
3.2
0
0
Fig. 4. R
V
3.4
GS
Fig. 2. Output Characteristics @ 125ºC
5
= 10V
0.2
3.6
DS(on)
3.8
10
Fig. 6. Input Admittance
0.4
vs. Drain Current
4
Normalized to I
15
I
4.2
D
T
V
V
J
DS
- Amperes
GS
0.6
= 125ºC
4.4
- Volts
- Volts
-40ºC
25ºC
20
4.6
0.8
V
4.8
GS
25
T
= 10V
D
J
IXTP1N120P
IXTA1N120P
= 125ºC
= 0.5A Value
5
1
6V
5V
T
30
J
5.2
= 25ºC
5.4
1.2
35
5.6
5.8
1.4
40