IRF1405STRRPBF International Rectifier, IRF1405STRRPBF Datasheet

IRF1405STRRPBF

Manufacturer Part Number

IRF1405STRRPBF

Description

MOSFET N-CH 55V 131A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF1405LPBF.pdf (11 pages)

2.IRF1405S.pdf (12 pages)

Specifications of IRF1405STRRPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

5.3 mOhm @ 101A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

131A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

260nC @ 10V

Input Capacitance (ciss) @ Vds

5480pF @ 25V

Power - Max

200W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Transistor Polarity

N Channel

Continuous Drain Current Id

131A

Drain Source Voltage Vds

55V

On Resistance Rds(on)

5.3mohm

Rds(on) Test Voltage Vgs

10V

Peak Reflow Compatible (260 C)

Yes

Rohs Compliant

Yes

Configuration

Single

Resistance Drain-source Rds (on)

5.3 m Ohms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

131 A

Power Dissipation

200 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Fall Time

110 ns

Gate Charge Qg

170 nC

Minimum Operating Temperature

- 55 C

Rise Time

190 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Benefits

Description

Absolute Maximum Ratings

Thermal Resistance

Typical Applications

Stripe Planar design of HEXFET

utilizes the lastest processing techniques to achieve

extremely low on-resistance per silicon area. Additional

features of this HEXFET power MOSFET are a 175°C

junction operating temperature, fast switching speed

and improved repetitive avalanche rating. These

benefits combine to make this design an extremely

efficient and reliable device for use in Automotive

applications and a wide variety of other applications.

dv/dt

www.irf.com

STG

θJC

θJA

@ T

Electric Power Steering (EPS)

Anti-lock Braking System (ABS)

Wiper Control

Climate Control

Power Door

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy‡

Peak Diode Recovery dv/dt ƒ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Junction-to-Ambient (PCB mount)

Parameter

Power MOSFETs

AUTOMOTIVE MOSFET

@ 10V

IRF1405S

See Fig.12a, 12b, 15, 16

Typ.

300 (1.6mm from case )

–––

HEXFET

Pak

10 lbf•in (1.1N•m)

-55 to + 175

131†

Max.

93†

680

200

± 20

590

1.3

5.0

IRF1405L

Power MOSFET

TO-262

DS(on)

Max.

0.75

DSS

= 131A†

IRF1405S

IRF1405L

= 5.3mΩ

= 55V

Units

W/°C

°C/W

V/ns

°C

Related parts for IRF1405STRRPBF

IRF1405STRRPBF Summary of contents

Page 1

Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description ® Stripe ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 1 ...

Page 5

LIMITED BY PACKAGE 120 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 TOP Single Pulse BOTTOM 10% Duty Cycle 500 101A 400 300 200 100 0 25 ...

Page 8

D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent For N-channel 8 + • • ƒ • - „ - • • • P.W. Period D ...

Page 9

T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 EMBLY LINE "L" Note: "P" in assembly line position indicates "Lead-Free" OR www.irf.com (Dimensions are shown in ...

Page 10

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 ASS EMBLY LINE "C" Note: "P" in assembly line pos ition indicates "Lead-Free" ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes: Repetitive rating; ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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