IRF1405STRRPBF International Rectifier, IRF1405STRRPBF Datasheet - Page 11

• Manufacturer Part Number: IRF1405STRRPBF
• Description: MOSFET N-CH 55V 131A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1405STRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 131A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 5480pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 131A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 5.3 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 131 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 110 ns
• Gate Charge Qg: 170 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 190 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant


‚
ƒ
„
ˆ
www.irf.com
Notes:
For recommended footprint and soldering techniques refer to application note #AN-994.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
2
This is applied to D
Repetitive rating; pulse width limited by
I
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R
T
max. junction temperature. (See fig. 11).
Starting T
SD
J
G
≤ 175°C
≤ 101A, di/dt ≤ 210A/µs, V
= 25Ω, I
J
= 25°C, L = 0.11mH
AS
= 101A. (See Figure 12).
FEED DIRECTION
FEED DIRECTION
2
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
TRR
TRL
330.00
(14.173)
DD
MAX.
≤ V
1.85 (.073)
1.65 (.065)
(BR)DSS
10.90 (.429)
10.70 (.421)
This product has been designed and qualified for the industrial market.
13.50 (.532)
12.80 (.504)
,
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
…
†
‡
C
as C
Visit us at www.irf.com for sales contact information.12/04
Data and specifications subject to change without notice.
oss
Calculated continuous current based on maximum allowable
Limited by T
junction temperature. Package limitation current is 75A.
avalanche performance.
Qualification Standards can be found on IR’s Web site.
eff. is a fixed capacitance that gives the same charging time
oss
16.10 (.634)
15.90 (.626)
while V
11.60 (.457)
11.40 (.449)
1.75 (.069)
1.25 (.049)
1.60 (.063)
1.50 (.059)
Jmax
DS
is rising from 0 to 80% V
, see Fig.12a, 12b, 15, 16 for typical repetitive
27.40 (1.079)
23.90 (.941)
26.40 (1.039)
24.40 (.961)
15.42 (.609)
15.22 (.601)
4
3
30.40 (1.197)
0.368 (.0145)
0.342 (.0135)
60.00 (2.362)
MAX.
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
4
MIN.
TAC Fax: [phone]
DSS
.
11