IRF6646 International Rectifier, IRF6646 Datasheet - Page 5

• Manufacturer Part Number: IRF6646
• Description: MOSFET N-CH 80V 12A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6646

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4.9V @ 150µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2060pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MN
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.5 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 12 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 20 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Fig 12. Maximum Drain Current vs. Ambient Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
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1000
100
14
12
10
10
8
6
4
2
0
1
0
25
0.0
0.2
V SD , Source-to-Drain Voltage (V)
T A , Ambient Temperature (°C)
50
0.4
0.6
75
0.8
Fig 14. Maximum Avalanche Energy vs. Drain Current
100
1.0
T J = 150°C
T J = 25°C
T J = -40°C
V GS = 0V
1000
1.2
900
800
700
600
500
400
300
200
100
125
0
25
1.4
Starting T J , Junction Temperature (°C)
150
1.6
50
75
100
I D
BOTTOM 7.2A
1000
0.01
100
0.1
6.0
5.0
4.0
3.0
2.0
10
1
0.01
125
-75
Fig11. Maximum Safe Operating Area
TOP
3.3A
4.0A
T A = 25°C
T J = 150°C
Single Pulse
Fig 13. Typical Threshold Voltage vs.
-50
V DS , Drain-to-Source Voltage (V)
150
0.10
-25
Junction Temperature
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
25
1.00
50
75
10msec
IRF6646
10.00
I D = 150µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
100 125
100µsec
1msec
100.00
150
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