IRF1404ZSPBF International Rectifier, IRF1404ZSPBF Datasheet - Page 4

• Manufacturer Part Number: IRF1404ZSPBF
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF1404ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 200 A
• Gate Charge, Total: 75 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 230 W
• Resistance, Drain To Source On: 2.7 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 30 ns
• Time, Turn-on Delay: 19 ns
• Transconductance, Forward: 170 S
• Voltage, Breakdown, Drain To Source: 40 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 75A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0037Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 190A
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000.0
100.0
8000
6000
4000
2000
10.0
1.0
0.1
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
Crss
Ciss
Coss
T J = 25°C
1.0
f = 1 MHZ
10
1.4
V GS = 0V
1.8
100
10000
1000
100
Fig 8. Maximum Safe Operating Area
10
20
16
12
8
4
0
1
Fig 6. Typical Gate Charge Vs.
0
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 75A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
40
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 32V
VDS= 20V
10
80
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100µsec
10msec
1msec
120
100
1000
160