IRF1404ZSPBF International Rectifier, IRF1404ZSPBF Datasheet - Page 6

• Manufacturer Part Number: IRF1404ZSPBF
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF1404ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 200 A
• Gate Charge, Total: 75 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 230 W
• Resistance, Drain To Source On: 2.7 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 30 ns
• Time, Turn-on Delay: 19 ns
• Transconductance, Forward: 170 S
• Voltage, Breakdown, Drain To Source: 40 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 75A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0037Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 190A
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
12V
V
V
G
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
Current Regulator
Q
.2µF
GS
t p
t p
50KΩ
3mA
Current Sampling Resistors
I AS
D.U.T
.3µF
0.01 Ω
L
I
G
Q
Charge
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
Fig 14. Threshold Voltage Vs. Temperature
600
500
400
300
200
100
4.0
3.0
2.0
1.0
0
Fig 12c. Maximum Avalanche Energy
-75 -50 -25
25
Starting T J , Junction Temperature (°C)
50
Vs. Drain Current
T J , Temperature ( °C )
0
75
25
100
50
75
www.irf.com
125
I D = 250µA
100 125 150 175
150
175