STP14NK60ZFP STMicroelectronics, STP14NK60ZFP Datasheet - Page 3

MOSFET N-CH 600V 13.5A TO-220FP

STP14NK60ZFP

Manufacturer Part Number
STP14NK60ZFP
Description
MOSFET N-CH 600V 13.5A TO-220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP14NK60ZFP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
13.5A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
75nC @ 10V
Input Capacitance (ciss) @ Vds
2220pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
450mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.5 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
13.5 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP14NK60ZFP
Manufacturer:
ST
Quantity:
10 000
Part Number:
STP14NK60ZFP
Manufacturer:
ON
Quantity:
5 000
Part Number:
STP14NK60ZFP
Manufacturer:
ST
0
STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
V
Symbol
R
Symbol
dv/dt
ESD(G-S)
R
I
V
SD
thj-case
P
V
DM
V
V
T
thj-a
DGR
T
T
I
I
TOT
ISO
GS
DS
stg
D
D
≤ 13.5A, di/dt ≤ 200A/µs, V
l
J
(2)
(3)
Absolute maximum ratings
Thermal data
Thermal resistance junction-case Max
Thermal resistance junction-ambient
Max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD (HBM-C= 100pF, R=
1.5kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
DD
Parameter
Parameter
≤ V
(BR)DSS
C
GS
= 25°C
GS
= 20KΩ)
, T
= 0)
j
≤ T
JMAX
C
C
=100°C
= 25°C
.
TO-220/D²PAK/I²PAK
TO-220/D²PAK/I²PAK
TO-247
TO-247
0.78
62.5
13.5
1.28
160
8.5
54
--
-55 to 150
Value
Value
4000
300
± 30
600
600
4.5
Electrical ratings
TO-220FP
TO-220FP
13.5
8.5
54
2500
0.32
40
3.1
50
(1)
(1)
(1)
W/°C
°C/W
°C/W
Unit
V/ns
Unit
°C
W
°C
V
V
V
A
A
A
V
V
3/19

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