STP14NK60ZFP STMicroelectronics, STP14NK60ZFP Datasheet - Page 4

• Manufacturer Part Number: STP14NK60ZFP
• Description: MOSFET N-CH 600V 13.5A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP14NK60ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 13.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2220pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 13.5 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical ratings
4/19
Table 3.
Table 4.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
E
GSO
I
AS
AS
(1)
Avalanche characteristics
Gate-source zener diode
STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z
Gate-source breakdown voltage
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Parameter
Parameter
Igs=±1mA
(Open Drain)
Test conditions
Min.
30
Value
300
Typ.
12
Max.
Unit
Unit
mJ
A
V