IRF1010EZPBF International Rectifier, IRF1010EZPBF Datasheet - Page 3
![MOSFET N-CH 60V 75A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF1010EZPBF
Manufacturer Part Number
IRF1010EZPBF
Description
MOSFET N-CH 60V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF1010EZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 mOhm @ 51A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
2810pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
84 A
Gate Charge, Total
58 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
140 W
Resistance, Drain To Source On
6.8 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
38 ns
Time, Turn-on Delay
19 ns
Transconductance, Forward
200 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
84 A
Mounting Style
Through Hole
Gate Charge Qg
58 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1010EZPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1010EZPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.irf.com
10000
1000
1000
100
100
0.1
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
4
TOP
BOTTOM
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5
T J = 25°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
6
4.5V
V DS = 25V
60µs PULSE WIDTH
7
20µs PULSE WIDTH
Tj = 25°C
10
8
9
100
10
1000
100
Fig 4. Typical Forward Transconductance
100
0.1
Fig 2. Typical Output Characteristics
10
90
80
70
60
50
40
30
20
10
1
0
0.01
0
TOP
BOTTOM
20
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
vs. Drain Current
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
40
T J = 175°C
60
T J = 25°C
1
80
20µs PULSE WIDTH
Tj = 175°C
4.5V
100
10
120
3
100
140