IRF1010EZPBF International Rectifier, IRF1010EZPBF Datasheet - Page 4
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IRF1010EZPBF
Manufacturer Part Number
IRF1010EZPBF
Description
MOSFET N-CH 60V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF1010EZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 mOhm @ 51A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
2810pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
84 A
Gate Charge, Total
58 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
140 W
Resistance, Drain To Source On
6.8 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
38 ns
Time, Turn-on Delay
19 ns
Transconductance, Forward
200 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
84 A
Mounting Style
Through Hole
Gate Charge Qg
58 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1010EZPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1010EZPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
1000.00
100.00
100000
4
10.00
10000
1.00
0.10
1000
100
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
T J = 175°C
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
T J = 25°C
f = 1 MHZ
10
C iss
C rss
C oss
V GS = 0V
100
10000
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
0.1
10
Fig 8. Maximum Safe Operating Area
1
1
0
Fig 6. Typical Gate Charge vs.
I D = 51A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
10
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
20
V DS = 48V
V DS = 30V
V DS = 12V
30
10
10msec
100µsec
1msec
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40
50
100
60