IRF7769L2TRPBF International Rectifier, IRF7769L2TRPBF Datasheet - Page 2
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IRF7769L2TRPBF
Manufacturer Part Number
IRF7769L2TRPBF
Description
MOSFET N-CH 100V DIRECTFET L8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7769L2TR1PBF.pdf
(11 pages)
Specifications of IRF7769L2TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 mOhm @ 74A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
11560pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
124 A
Power Dissipation
125 W
Gate Charge Qg
200 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
ΔΒV
ΔV
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
DS(on)
GS(th)
G
iss
oss
rss
oss
oss
SD
g
Q
Q
Q
Q
sw
oss
rr
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/ΔT
/ΔT
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) g
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
100
–––
–––
–––
–––
–––
–––
410
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
–––
11560
1240
6665
0.02
–––
–––
–––
–––
–––
–––
200
110
119
590
690
–––
–––
–––
220
-10
2.8
2.7
9.0
1.5
30
51
53
44
32
92
41
75
-100
–––
–––
–––
250
100
–––
300
–––
–––
165
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
124
500
112
330
3.5
4.0
1.3
20
mV/°C
V/°C
mΩ
µA
nA
nC
nC
pF
nC
ns
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 9
V
V
I
R
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs i
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
GS
GS
J
J
G
= 74A
= 74A
=1.8Ω
= 25°C, I
= 25°C, I
= V
= 100V, V
= 80V, V
= 25V, I
= 50V
= 16V, V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 50V, V
= 0V
= 0V, V
= 0V, V
GS
, I
D
Conditions
Conditions
S
F
D
DS
DS
D
D
= 250µA
GS
GS
GS
= 74A, V
= 74A, V
= 250µA
= 74A
= 74A i
GS
= 1.0V, f=1.0MHz
= 80V, f=1.0MHz
= 0V, T
= 0V
= 10V i
= 0V
D
www.irf.com
DD
GS
= 2mA
J
= 125°C
= 0V i
= 50V