IRF7769L2TRPBF International Rectifier, IRF7769L2TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7769L2TRPBF
• Description: MOSFET N-CH 100V DIRECTFET L8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7769L2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 11560pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 124 A
• Power Dissipation: 125 W
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 19a. Unclamped Inductive Test Circuit
Fig 18a. Gate Charge Test Circuit
0
R G
20V
GS
V DS
Fig 20a. Switching Time Test Circuit
t p
20K
1K
≤ 0.1 %
I AS
≤ 1
D.U.T
G
0.01 Ω
L
D
S
DUT
15V
L
DRIVER
+
-
V DD
+
-
VCC
A
V
90%
10%
V
Fig 18b. Gate Charge Waveform
Id
DS
GS
Fig 19b. Unclamped Inductive Waveforms
I
Vgs
AS
Fig 20b. Switching Time Waveforms
t
d(on)
Qgodr
t
r
t p
Qgd
Qgs2
V
t
d(off)
Vgs(th)
(BR)DSS
Vds
Qgs1
t
f
7