IXFH18N60P IXYS, IXFH18N60P Datasheet
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Manufacturer Part Number
IXFH18N60P
Description
MOSFET N-CH 600V 18A TO-247
Specifications of IXFH18N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Forward Transconductance Gfs (max / Min)
16 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
18 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
18
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
50
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
360
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
GSS
DSS
D25
DM
AR
© 2006 IXYS All rights reserved
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GS
GSM
AR
AS
D
SOLD
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Tranisent
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-247
PLUS220 & PLUS220SMD
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
GS
, di/dt ≤ 100 A/μs, V
DSS
HiPerFET
, I
D
D
D
= 250 μA
= 2.5 mA
G
= 0.5 I
DS
= 5 Ω
= 0 V
D25
(TO-247)
GS
= 1 MΩ
DD
T
J
≤ V
= 125°C
DSS
IXFH 18N60P
IXFV 18N60P
IXFV 18N60PS
JM
,
600
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
600
600
±30
±40
360
150
300
260
1.0
18
45
18
30
10
6
4
±100
250
400
Max.
5.5
25
V/ns
mΩ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
g
J
TO-247 AD (IXFH)
PLUS220 (IXFV)
Features
l
l
l
Advantages
l
l
l
PLUS220SMD (IXFV...S)
G = Gate
S = Source
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DSS
DS(on)
G
D
S
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
= 600
= 18
G
D = Drain
TAB = Drain
S
400 mΩ Ω Ω Ω Ω
200 ns
DS99390E(03/06)
D (TAB)
D (TAB)
D (TAB)
A
V
Related parts for IXFH18N60P
IXFH18N60P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 18N60P IXFV 18N60P IXFV 18N60PS Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.0 ≤ DSS 360 -55 ... +150 150 -55 ...
... Note 1: Pulse test, t ≤ 300 μs, duty cycled ≤ PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C unless otherwise specified) J Min ...
... V - Volts DS Fig. 3. Output Characteristics @ 125º Volts DS Fig Normalized to I DS(on) Drain Current 3 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved 3.2 = 10V 7V 2.8 2 1.6 5V 1.2 0 Value vs 125º 25º -50 IXFH 18N60P IXFV 18N60P IXFV 18N60PS Fig ...
... Fig. 9. Forward Voltage Drop of Intrinsic Diode 125º 0.3 0.4 0.5 0.6 0 Volts SD Fig. 11. Capacitance 10,000 MHz 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 5 25º 0.8 0.9 1 1.1 100 C iss C oss 10 C rss ...
... IXYS All rights reserved IXFV 18N60P IXFV 18N60PS Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXFH 18N60P 1 10 ...
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