IXFH18N60P IXYS, IXFH18N60P Datasheet - Page 4

MOSFET N-CH 600V 18A TO-247

IXFH18N60P

Manufacturer Part Number
IXFH18N60P
Description
MOSFET N-CH 600V 18A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFH18N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Forward Transconductance Gfs (max / Min)
16 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
18 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
18
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
50
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
360
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH18N60P
Manufacturer:
IXYS
Quantity:
6 000
Part Number:
IXFH18N60P
Manufacturer:
IXYS
Quantity:
15 500
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
70
60
50
40
30
20
10
40
35
30
25
20
15
10
100
0
5
0
10
0.3
3.5
0
f = 1 MHz
0.4
4
5
Fig. 9. Forward Voltage Drop of
T
J
0.5
= 125ºC
- 40ºC
10
Fig. 7. Input Admittance
25ºC
4.5
Fig. 11. Capacitance
Intrinsic Diode
0.6
V
V
15
V
SD
GS
DS
5
- Volts
- Volts
T
0.7
- Volts
J
20
= 125ºC
5.5
0.8
25
C iss
C oss
C rss
6
0.9
30
T
J
6.5
= 25ºC
35
1
1.1
40
7
100
10
1
10
24
20
16
12
9
8
7
6
5
4
3
2
1
0
10
8
4
0
0
0
R
T
T
T
DS(on)
J
C
J
Fig. 12. Forward-Bias Safe Operating Area
V
I
I
= 150ºC
= 25ºC
D
G
= - 40ºC
DS
5
125ºC
= 9A
= 10mA
IXFV 18N60P IXFV 18N60PS
25ºC
5
Limits
= 300V
10
Fig. 8. Transconductance
10
15
Fig. 10. Gate Charge
Q
G
I
- NanoCoulombs
V
15
D
DS
20
- Amperes
- Volts
100
20
25
DC
30
25
IXFH 18N60P
10ms
35
30
1ms
40
35
45
25µs
100µs
1000
40
50

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